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Your search returned 24 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2004 Volume number : 51 Issue: 05 |
Unified Ac Model For The Resonant Tunneling Diode
(Article)
Subject:
Quantum Capacitance
,
Quantum Inductance
Author:
Qingmin
Liu
Alan
Seabaugh
page:
653
-
657
Reduction Of Base-Transit Time Of Inp-Gainas Hbts Due To Electron Injection From An Energy Ramp And Base-Composition Grading
(Article)
Subject:
Base-Composition Grade
,
Base-Transit Time
Author:
Gal
Zohar
Shimon
Cohen
page:
658
-
662
High Activity Of B During Solid-Phase Epitaxy In A Pre-Amorphized Layer Formed By Ge Ion Implantation And Deactivation During A Subsequent Thermal Process
(Article)
Subject:
Activation
,
Boron
,
Deactivation
Author:
Kunihiro
Suzuki
H
Tashiro
page:
663
-
668
Lsser Thermal Processing Of Amphous Silicon Gates To Reduce Poly-Depletion In Cmos Devices
(Article)
Subject:
Boron Penetration
,
Gate Oxide
Author:
Yung Fu
Chong
Hans-Joachim
Gossmann
page:
669
-
676
Modeling Spiral Inductors In Sos Processes
(Article)
Subject:
Eddy Current
,
Inductance
Author:
W. B
Kuhn
X
He
page:
677
-
683
Simulation Of Quantum Transport In Monolithic Ics Based On In0.53 Ga0.47 As-In0.52al0.48as Rtds And Hemts With A Quantum Hydrodynamic Transport Model
(Article)
Subject:
Device Simulation
,
High Electron Mobility
Author:
Jan
Hontschel
Roland
Stenzel
page:
684
-
692
Effect Of Stochastic Dead Space On Noise In Avalanche Photodiodes
(Article)
Subject:
Avalanche Photodiodes
,
Excess Noise Factor
Author:
Oh-Hyun
Kwon
M M
Hayat
page:
693
-
700
Drain Disturb During Chisel Programming Of Nor Flash Eeproms-Physical Mechanisms And Impact Of Technological Parameters
(Article)
Subject:
Band-To-Band -Tunneling
,
Channel Hot Electron (Che)
Author:
Deleep R.
Nair
S
Mahapatra
page:
701
-
707
Using Layout Technique And Direct-Tunneling Mechanism To Promote Dc Performance Of Partially Depleted Soi Devices
(Article)
Subject:
Direct Tunneling
,
Floating Body
Author:
Shiao-Shien.
Chen
Shiang
Huang-Lu
page:
708
-
713
Low-Field Amorphous State Resistance And Tyhreshold Voltage Drift In Chalcogenide Materials
(Article)
Subject:
Chalcogenide
,
Nonvolatile
Author:
A.
Pirovano
Andrea L
Lacaita
page:
714
-
719
An Enduranceevaluation Method For Flash Eeprom
(Article)
Subject:
Dynamic Stresses
,
Evaluation
Author:
Nian-Kai
Zous
Chi-Yuan
Chin
page:
720
-
725
Test Structure Measuring Inter- And Interlayer Coupling Capacitance Of Interconnection With Subfemtofarad Resolution
(Article)
Subject:
Capacitance Measurement
,
Integrated Circuit
Author:
Tatsuya
Kunikiyo
Tetsuya
Watanabe
page:
726
-
735
Test Structure Measureing Inter- And Intralayer Coupling Capacitance Of Interconnection With Subfemtofarad
(Article)
Subject:
Capacitance Measurement
,
Integrated Circuit
Author:
Tatsuya
Kunikiyo
T
Watanabe
page:
726
-
735
Influence Of Dielectric Constant Distribution In Gate Dielectric On The Degradation Of Electron Mobility By Remote Coulomb Scattering In Inversion Layers
(Article)
Subject:
Dielectric Constant
,
High Rate Wireless Data
Author:
Mizuki
Ono
Kenji
Ishihara
page:
736
-
740
Full Band Approachto Tunneling In Mos Structures
(Article)
Subject:
Metal-Oxide Semiconductor
,
Tight-Binding
Author:
F.
Sacconi
Aldo Di.
Carlo
page:
741
-
748
Effect Ofdiscrete Impurities On Electron Transport In Ultrashort Mosfet Using 3-D Mc Simulation
(Article)
Subject:
Doping Fluctuations
Author:
Philippe
Dollfus
page:
749
-
756
0.13-Um Low-Cu Cmos Logic-Based Technology For 2.1-Gb High Data Rate Read-Channel
(Article)
Subject:
Dual
,
High-Performance
,
Powder Production
Author:
B.Z
Guo
A
Lientz
page:
757
-
763
On The Calculation Of The Quasi-Bound-State Energies And Lifetimes In Inverted Mos Structures With Ultrathin Oxide And Its Application To The Direct Tunneling Current
(Article)
Subject:
Direct Tunneling
,
Inversion Layers
Author:
Bogdan
Govoreanu
Langseth
Magnus
page:
764
-
773
Band Diagram And Carrier Conduction Mechanisms In Zro2 Mis Structures
(Article)
Subject:
Band Diagram
,
Carrier Conduction
Author:
Takahiro
Yamaguchi
H
Satake
page:
774
-
779
Low-Frequency Noise Behavior Of Sio2-Hfo2 Dual -Layer Gate Dielectric In Mosfets With Different Interfacial Oxide Thickness
(Article)
Subject:
Charge Trapping
,
Hfo2
Author:
Eddy
Simoen
A
Mercha
page:
780
-
784
The Effects Of Isoelectronic Al Doping And Process Optimization For The Fabrication Of High-Power Algan-Gan Hemts
(Article)
Subject:
Field-Effect Transistors
,
Gallium Nitride
Author:
B.
Youn
C. M
Lee
page:
785
-
789
High-Power Soi Vertical Transistors With Lateral Drain : Process Developments Characterization, And Modeling
(Article)
Subject:
Bipolar Transistor
,
Parasitic Capacitances
Author:
Kuntjoro
Pinardi
Ulrich
Heinle
page:
790
-
796
A Novel Low On-Resistance Schottky-Barrier Diode With P-Buried Floating Layer Structure
(Article)
Subject:
Buried Layer Structure
,
Low On-Resistance
Author:
Waturu
Saito
Ichiro
Omura
page:
797
-
802
Resonant Response Of A Fet To An Ac Signal: Influence Of Magnetic Field, Device Length, And Temperature
(Article)
Subject:
Field-Effect Transistors
,
High-Electron Mobility
Author:
Manvir Singh
Kushwaha
Panagiotis
Vailopoulos
page:
803
-
813
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